Varnitronics
ST

TS27M4CDT

60mA 4 1.1mV 0.6V/us 1pA 80dB 150uA 1MHz SOIC-14 Instrumentation, Op Amps, Buffer Amps RoHS

SOIC-14ROHS3 CompliantActive

Precision low power CMOS quad operational amplifiers

Manufacturer
ST
Manufacturer part #
TS27M4CDT
Store part #
C155637
Package / case
SOIC-14
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

5 in stock

#C155637

Stock & price checked 32 h ago

QuantityUnit pricePack price
1+₹70.78₹70.78
10+₹55.33₹553.30
30+₹48.57₹1,457.10
100+₹40.07₹4,007.00
500+₹36.37₹18,185.00
1,000+₹34.20₹34,200.00

1 × ₹70.78

₹70.78

excl. GST

₹83.52 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 2,500 per reel

TS27M4CDT

₹70.78 for 1 + GST

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Specifications

Output Current
60mA
Number of Channels
4
Vos - Input Offset Voltage
1.1mV
Slew Rate
0.6V/us
Input Offset Current(Ios)
1pA
Operating Temperature
0℃~+70℃
Ib - Input Bias Current
1pA
Common Mode Rejection Ratio(CMRR)
80dB
Input Offset Voltage Drift(Vos TC)
2uV/℃
Quiescent Current
150uA
Gain Bandwidth Product
1MHz
Input Voltage Noise Density
38nV/√Hz@1kHz
Single Supply
3V~16V

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
2,500 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.263 g

Overview

These devices are low cost, low power quad operational amplifiers designed to operate with single or dual supplies. These operational amplifiers use the ST silicon gate CMOS process allowing an excellent consumption - speed ratio. These series are ideally suited for low consumption applications. Three power consumptions are available thus offering the best consumption - speed ratio for your application: - ICC = 10 μA/amp : TS27L4 (very low power) - ICC = 150 μA/amp: TS27M4 (low power) - ICC = 1 mA/amp: TS274 (standard) These CMOS amplifiers offer very high input impedance and extremely low input currents. The major advantage versus JFET devices is the very low input currents drift with temperature.

Key features

  • Low power consumption: 150 μA/ρp
  • Output voltage can swing to ground
  • Excellent phase margin on capacitive loads
  • Unity gain stable
  • Two input offset voltage selections

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