MDD(Microdiode Semiconductor)
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onsemiDatasheet (PDF)
UF4SC120023B7S
385W 23mΩ 1 N-channel 20V TO-263-7 Single FETs, MOSFETs RoHS
TO-263-7ROHS CompliantActive
- Manufacturer
- onsemi
- Manufacturer part #
- UF4SC120023B7S
- Store part #
- C44870454
- Package / case
- TO-263-7
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
6 in stock
#C44870454
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹4,064.86 | ₹4,064.86 |
| 30+ | ₹3,847.23 | ₹1,15,416.90 |
1 × ₹4,064.86
₹4,064.86
excl. GST
₹4,796.53 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 800 per reel
UF4SC120023B7S
₹4,064.86 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Configuration
- Standalone
- FET Type
- N-Channel
- Output Capacitance(Coss)
- 85pF
- Ciss-Input Capacitance
- 1.43nF
- Pd - Power Dissipation
- 385W
- Reverse Transfer Capacitance (Crss)
- 2pF
- RDS(on)
- 23mΩ
- Number
- 1 N-channel
- Gate-Source Breakdown Voltage (Vgss)
- 20V
- Gate-Source Cutoff Voltage (VGS(off))
- 4.8V
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 800 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.078 g
Overview
The UF4SC120023B7S is a 1200 V, 23 mΩ G4 SiC FET. Based on a unique "cascode" circuit configuration, it co-packages a normally-on SiC JFET with a Si MOSFET to form a normally-off SiC FET device. The device features standard gate drive characteristics, allowing the use of off-the-shelf gate drivers, enabling drop-in replacement of Si IGBTs, Si superjunction devices, or SiC MOSFETs with minimal redesign. Housed in a space-saving TO-263-7 package that supports automated assembly, the device offers ultra-low gate charge and excellent reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
Applications
- Electric vehicle charging
- Photovoltaic inverters
- Switched-mode power supplies
- Power factor correction modules
- Induction heating
Key features
- On-resistance R<sub>DS(on)</sub>: 23 mΩ (typical)
- Operating temperature: 175 ℃ (maximum)
- Excellent reverse recovery characteristics: Q<sub>rr</sub> = 243 nC
- Low body diode forward voltage V<sub>FSD</sub>: 1.2 V
- Low gate charge: Q<sub>G</sub> = 37.8 nC
- Threshold voltage V<sub>G(th)</sub>: 4.8 V (typical), supports 0 ~ 15 V gate drive
- Low intrinsic capacitance
- ESD protection: Human Body Model Level 2 and Charged Device Model Level C3
- TO-263-7 package for faster switching speed and cleaner gate waveform
- Lead-free, halogen-free, and RoHS compliant
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