MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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onsemiDatasheet (PDF)
UJ3C065080K3S
TO-247-3 Single FETs, MOSFETs RoHS
TO-247-3ROHS CompliantActive
- Manufacturer
- onsemi
- Manufacturer part #
- UJ3C065080K3S
- Store part #
- C45082781
- Package / case
- TO-247-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
3 in stock
#C45082781
Stock & price checked 43 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹1,448.71 | ₹1,448.71 |
| 10+ | ₹1,405.71 | ₹14,057.10 |
1 × ₹1,448.71
₹1,448.71
excl. GST
₹1,709.48 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 30 per tube
UJ3C065080K3S
₹1,448.71 for 1 + GST
Specifications
- Gate Charge(Qg)
- 51nC
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 6.19 g
Overview
This SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to form a normally-off SiC FET device. The device features standard gate drive characteristics, enabling true drop-in replacement for Si IGBTs, Si MOSFETs, SiC MOSFETs, or Si super-junction devices. Housed in a TO247-3 package, the device offers ultra-low gate charge and excellent reverse recovery characteristics, making it ideally suited for switching inductive loads and any application requiring standard gate drive.
Applications
- Electric vehicle charging
- Photovoltaic inverters
- Switched-mode power supplies
- Power factor correction modules
- Motor drives
- Induction heating
Key features
- Typical on-resistance R<sub>DS(on),typ</sub>: 80 mΩ
- Maximum operating temperature: 175℃
- Excellent reverse recovery characteristics
- Low gate charge
- Low intrinsic capacitance
- ESD protection: HBM Class 2
- Lead-free, halogen-free, RoHS compliant
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