MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
RENESASDatasheet (PDF)
UPA2826T1S-E2-AT
20V 27A 20W 4.3mΩ@8V 1 N-channel N-Channel HWSON-8(3.3x3.3) Single FETs, MOSFETs RoHS
HWSON-8(3.3x3.3)ROHS3 CompliantActive
N-channel, Current: 27A, Voltage: 20V
- Manufacturer
- RENESAS
- Manufacturer part #
- UPA2826T1S-E2-AT
- Store part #
- C3278163
- Package / case
- HWSON-8(3.3x3.3)
- Category
- Single FETs, MOSFETs
- Packaging
- Tray
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C3278163
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹425.61 | ₹425.61 |
| 10+ | ₹416.07 | ₹4,160.70 |
| 30+ | ₹409.57 | ₹12,287.10 |
| 100+ | ₹403.07 | ₹40,307.00 |
1 × ₹425.61
₹425.61
excl. GST
₹502.22 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per tray
UPA2826T1S-E2-AT
₹425.61 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 20V
- Current - Continuous Drain(Id)
- 27A
- Ciss-Input Capacitance
- 3.61nF
- Pd - Power Dissipation
- 20W
- Reverse Transfer Capacitance (Crss)
- 1.13nF
- RDS(on)
- 4.3mΩ@8V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 37nC@4V
- Gate Threshold Voltage (Vgs(th))
- 1.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tray
- Standard pack
- 5,000 / Tray
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.54 g
Overview
μPA2826T1S is an N-channel MOSFET designed for power management applications in portable devices.
Applications
- Standard applications: computers, office equipment, communications equipment, test and measurement equipment, audio/visual equipment, consumer electronics appliances, machine tools, personal electronic devices, and industrial robots.
- High-quality applications: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, disaster prevention systems, anti-theft systems, safety equipment, and medical devices not specifically intended for life support.
Key features
- Drain-source voltage VDSS = 20 V (ambient temperature TA = 25°C)
- Low on-resistance
- Maximum on-resistance RDS(on) = 4.3 mΩ (gate-source voltage VGS = 8.0 V, drain current ID = 13.5 A)
- 2.5 V gate drive compatible
- Small, thin SMT package with heat spreader
- Lead-free, halogen-free
Alternatives
Similar parts — check the datasheet before substituting.
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