MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
VBFB165R04
N-Channel 650V 4.5A 60W Through Hole TO-251
TO-251RoHSActive
MOSFET N-CH 650V 4.5A TO-251
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- VBFB165R04
- Store part #
- C516945
- Package / case
- TO-251
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
100 in stock
#C516945
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹64.68 | ₹64.68 |
| 10+ | ₹50.30 | ₹503.00 |
| 30+ | ₹44.32 | ₹1,329.60 |
| 80+ | ₹35.93 | ₹2,874.40 |
| 480+ | ₹32.55 | ₹15,624.00 |
| 800+ | ₹30.55 | ₹24,440.00 |
1 × ₹64.68
₹64.68
excl. GST
₹76.32 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 80 per tube
VBFB165R04
₹64.68 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 650V
- Output Capacitance(Coss)
- 177pF
- Current - Continuous Drain(Id)
- 4.5A
- Ciss-Input Capacitance
- 1.417nF
- Pd - Power Dissipation
- 60W
- Reverse Transfer Capacitance (Crss)
- 7pF
- RDS(on)
- 2.1Ω@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 48nC@10V
- Gate Threshold Voltage (Vgs(th))
- 2V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 80 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.79 g
Overview
Key features
- Low Gate Charge Q₉ Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Compliant to RoHS directive 2002/95/EC
Alternatives
Similar parts — check the datasheet before substituting.
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