MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
VBFB16R04
N-Channel 600V 4A 125W Through Hole TO-251
TO-251RoHSActive
MOSFET N-CH 600V 4A TO-251
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- VBFB16R04
- Store part #
- C480971
- Package / case
- TO-251
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
58 in stock
#C480971
Stock & price checked 5 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹65.57 | ₹65.57 |
| 10+ | ₹52.15 | ₹521.50 |
| 30+ | ₹46.29 | ₹1,388.70 |
| 80+ | ₹39.17 | ₹3,133.60 |
| 480+ | ₹35.83 | ₹17,198.40 |
| 800+ | ₹33.93 | ₹27,144.00 |
1 × ₹65.57
₹65.57
excl. GST
₹77.37 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 80 per tube
VBFB16R04
₹65.57 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 600V
- Output Capacitance(Coss)
- 140pF
- Current - Continuous Drain(Id)
- 4A
- Ciss-Input Capacitance
- 1.1nF
- Pd - Power Dissipation
- 125W
- Reverse Transfer Capacitance (Crss)
- 15pF
- RDS(on)
- 2.2Ω@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 39nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 80 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.606 g
Overview
Key features
- Ultra Low Gate Charge
- Reduced Gate Drive Requirement
- Enhanced 30 V, VGS Rating
- Reduced Ciss, Coss, Crss
- Extremely High Frequency Operation
- Repetitive Avalanche Rated
- Compliant to RoHS Directive 2002/95/EC
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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