MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
VBM165R12S
N-Channel 650V 12A 210W Through Hole TO-220AB
TO-220ABRoHSActive
MOSFET N-CH 650V 12A TO-220AB
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- VBM165R12S
- Store part #
- C22357375
- Package / case
- TO-220AB
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
5 in stock
#C22357375
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹216.36 | ₹216.36 |
| 10+ | ₹178.98 | ₹1,789.80 |
| 50+ | ₹158.39 | ₹7,919.50 |
| 100+ | ₹135.07 | ₹13,507.00 |
| 500+ | ₹124.77 | ₹62,385.00 |
| 1,000+ | ₹120.15 | ₹1,20,150.00 |
1 × ₹216.36
₹216.36
excl. GST
₹255.30 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
VBM165R12S
₹216.36 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 650V
- Output Capacitance(Coss)
- 80pF
- Current - Continuous Drain(Id)
- 12A
- Ciss-Input Capacitance
- 2.1nF
- Pd - Power Dissipation
- 210W
- Reverse Transfer Capacitance (Crss)
- 4pF
- RDS(on)
- 360mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 70nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2 g
Overview
Applications
- Server and telecom power supplies
- Switch mode power supplies (SMPS)
- Power factor correction power supplies (PFC)
- Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
- Industrial
Key features
- Low figure-of-merit (FOM) R_on×Q_g
- Low input capacitance (C_iss)
- Reduced switching and conduction losses
- Ultra low gate charge (Q_g)
- Avalanche energy rated (UIS)
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