MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
VBZFB40N10
N-Channel 100V 35A 96W Through Hole TO-251
TO-251RoHSActive
MOSFET N-CH 100V 35A TO-251
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- VBZFB40N10
- Store part #
- C700675
- Package / case
- TO-251
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
48 in stock
#C700675
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹105.67 | ₹105.67 |
| 10+ | ₹85.49 | ₹854.90 |
| 30+ | ₹75.62 | ₹2,268.60 |
| 80+ | ₹63.03 | ₹5,042.40 |
| 480+ | ₹56.93 | ₹27,326.40 |
| 800+ | ₹53.99 | ₹43,192.00 |
1 × ₹105.67
₹105.67
excl. GST
₹124.69 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 80 per tube
VBZFB40N10
₹105.67 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 100V
- Output Capacitance(Coss)
- 500pF
- Current - Continuous Drain(Id)
- 35A
- Ciss-Input Capacitance
- 4nF
- Pd - Power Dissipation
- 96W
- Reverse Transfer Capacitance (Crss)
- 180pF
- RDS(on)
- 36mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 34nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 80 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.68 g
Overview
Applications
- Primary-side switch
Key features
- Trench power MOSFET
- Junction temperature 175°C
- PWM optimized
- 100% gate resistance (Rg) tested
- RoHS compliant (Directive 2002/95/EC)
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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 | CED540L-VB#C29779278VBsemi Elec · TO-251 | VBsemi Elec | TO-251 | 20 | ₹102.93 · 20 in stock | View |
 | VBFB1104N#C480962VBsemi Elec · TO-251 | VBsemi Elec | TO-251 | 156 | ₹107.24 · 156 in stock | View |
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