MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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MICROCHIPDatasheet (PDF)
VP2450N8-G
P-Channel 500V 160mA 1.6W Surface Mount SOT-89
SOT-89ROHS3 CompliantActive
MOSFET P-CH 500V 160mA SOT-89
- Manufacturer
- MICROCHIP
- Manufacturer part #
- VP2450N8-G
- Store part #
- C144242
- Package / case
- SOT-89
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
23 in stock
#C144242
Stock & price checked 7 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹626.77 | ₹626.77 |
| 10+ | ₹546.81 | ₹5,468.10 |
| 30+ | ₹499.09 | ₹14,972.70 |
| 100+ | ₹451.16 | ₹45,116.00 |
| 500+ | ₹428.81 | ₹2,14,405.00 |
| 1,000+ | ₹418.91 | ₹4,18,910.00 |
1 × ₹626.77
₹626.77
excl. GST
₹739.59 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,000 per reel
VP2450N8-G
₹626.77 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 75pF
- Ciss-Input Capacitance
- 190pF
- Pd - Power Dissipation
- 1.6W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 500V
- Current - Continuous Drain(Id)
- 160mA
- Reverse Transfer Capacitance (Crss)
- 20pF
- RDS(on)
- 30Ω@10V
- Number
- 1 P-Channel
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3.5V
- Type
- P-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.467 g
Overview
The VP2450 is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes a vertical Double-diffused Metal-Oxide Semiconductor (DMOS) structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. This Vertical DMOS Field-Effect Transistor (FET) is ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Applications
- Motor Controls
- Converters
- Amplifiers
- Switches
- Power Supply Circuits
- Drivers: Relays, Hammers, Solenoids, Lamps, Memory, Displays, Bipolar Transistors, etc.
Key features
- Free from Secondary Breakdown
- Low Power Drive Requirement
- Ease of Paralleling
- Low CISS and Fast Switching Speeds
- High Input Impedance and High Gain
- Excellent Thermal Stability
- Integral Source-drain Diode
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