MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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MICROCHIPDatasheet (PDF)
VP3203N3-G
740mW 30V 4A 600mΩ@10V 1 P-Channel P-Channel TO-92-3 Single FETs, MOSFETs RoHS
TO-92-3ROHS3 CompliantActive
- Manufacturer
- MICROCHIP
- Manufacturer part #
- VP3203N3-G
- Store part #
- C632612
- Package / case
- TO-92-3
- Category
- Single FETs, MOSFETs
- Packaging
- Bag-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
3 in stock
#C632612
Stock & price checked 43 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹537.35 | ₹537.35 |
| 10+ | ₹530.26 | ₹5,302.60 |
| 30+ | ₹525.75 | ₹15,772.50 |
| 100+ | ₹521.01 | ₹52,101.00 |
1 × ₹537.35
₹537.35
excl. GST
₹634.07 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 1,000 per bag
VP3203N3-G
₹537.35 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 100pF
- Ciss-Input Capacitance
- 300pF
- Pd - Power Dissipation
- 740mW
- Configuration
- Standalone
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 30V
- Current - Continuous Drain(Id)
- 4A
- Reverse Transfer Capacitance (Crss)
- 60pF
- RDS(on)
- 600mΩ@10V
- Number
- 1 P-Channel
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3.5V
- Type
- P-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Bag-packed
- Standard pack
- 1,000 / Bag
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.456 g
Overview
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Applications
- Motor controls
- Converters
- Amplifiers
- Switches
- Power supply circuits
- Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
Key features
- Free from secondary breakdown
- Low power drive requirement
- Ease of paralleling
- Low Ciss and fast switching speeds
- High input impedance and high gain
- Excellent thermal stability
- Integral source-to-drain diode
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