11LC080T-I/TT

The 1 Kbit through 16 Kbit Serial Electrically Erasable PROMs are organized in blocks of 8-bit memory and support the patented single 1/0 UNI/O serial bus. By using Manchester encoding techniques, the clock and data are combined into a single, serial bit stream (SClO), where the clock signal is extracted by the receiver to correctly decode the timing and value of each bit. Low-voltage design permits operation down to 1.8V (for 11AAxXX devices), with standby and active currents of only 1 uA and 1 mA, respectively. The 11xX family is available in standard packages including 8-lead PDIP and SOIC, and advanced packaging including 3-lead SOT-23, 3-lead TO-92, 4-lead Chip Scale, 8-lead TDFN, and 8-lead MSOP.

Key features

• Single 1/O, UNI I/O Serial Interface Bus
• Low-Power CMOS Technology: - 1 mA active current, typical 1 μA standby current (max.) (l-temp) 128x8 through 2,048x8 Bit Organizations
• Schmitt Trigger Inputs for Noise Suppression
• Output Slope Control to Eliminate Ground Bounce
• 100 kbps Max. Bit Rate - Equivalent to 100 kHz Clock Frequency
• Self-Timed Write Cycle (including Auto-Erase)
• Page-Write Buffer for up to 16 Bytes
• STATUS Register for Added Control: - Write enable latch bit - Write-In-Progress bit
• Block Write Protection: - Protect none, 1/4, 1/2 or all of array
• Built-in Write Protection: - Power-on/off data protection circuitry - Write enable latch
• High Reliability: - Endurance: 1,000,000 erase/write cycles - Data retention: >200 years - ESD protection: >4,000 V
• 3-lead SOT-23 and TO-92 Packages
• 4-lead Chip Scale Package
• 8-lead PDIP, SOIC, MSOP, TDFN Packages
• Pb-Free and RoHS Compliant
• Available Temperature Ranges: - Industrial (l): -40℃ to +85℃ - Automotive (E): -40℃ to +125℃