1EDN7116GXTMA1

The EDN x G is a single-channel gate-driver IC optimized for driving Infineon CoolGaN Schottky Gate HEMTs, as well as other GaN SG HEMTs and Si MOSFETs. This gate driver includes several key features that enable a high-performance system design with fast-switching transistors, including Truly Diferential Input (TDI), four driving strength options, active Miller clamp, bootstrap voltage clamp, and adjustable charge pump.

Applications

• Single channel: Synchronous rectifier, Class-E resonant wireless power
• Half-bridge (2 x EDN x G): DC-DC converter, BLDC/PMSM motor drive, Class-D audio amplifier, Class-D resonant wireless power

Key features

• Optimized for driving GaN SG HEMTs and Si MOSFETs
• Fully diferential logic input circuitry to avoid false triggering in low-side or high-side operation
• High common-mode input voltage range (CMR) up to ± V for high side operation
• High immunity to common-mode voltage transitions ( V/ns) for robust operation during fast switching
• Compatible with 3.3 V or 5 V input logic
• Four driving strength variants to optimize switching speed without external gate resistors - up to A source/sink current capability
• Active bootstrap clamp to avoid bootstrap capacitor overcharging during dead-time
• Active Miller clamp with A sink capability to avoid induced turn-on
• Adjustable charge pump for negative turn-of supply voltage
• Qualified for industrial applications according to the relevant tests of JEDEC