1EDN7126UXTSA1
4.2V~11V 1.5A 1.5A PG-TSNP-7-11 Gate Drivers RoHS
200 V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs
- Manufacturer
- Infineon
- Manufacturer part #
- 1EDN7126UXTSA1
- Store part #
- C6984478
- Package / case
- PG-TSNP-7-11
- Category
- Gate Drivers
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
194 in stock
#C6984478
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹137.17 | ₹137.17 |
| 10+ | ₹113.51 | ₹1,135.10 |
| 30+ | ₹100.50 | ₹3,015.00 |
| 100+ | ₹85.73 | ₹8,573.00 |
| 500+ | ₹79.22 | ₹39,610.00 |
| 1,000+ | ₹76.18 | ₹76,180.00 |
1 × ₹137.17
₹137.17
excl. GST
₹161.86 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 4,500 per reel
1EDN7126UXTSA1
₹137.17 for 1 + GST
Specifications
- Low Level Delay Time
- 75ns
- High Level Delay Time
- 75ns
- Quiescent Current
- 1.8mA
- Voltage - Supply
- 4.2V~11V
- Operating Temperature
- -40℃~+125℃
- Driven Configuration
- High Side;Half-Bridge
- Current - Output Low(IOL)
- 1.5A
- Rise Time
- 4ns
- Fall Time
- 4ns
- Features
- Dead-time control;Interleaved conduction protection
- Current - Output High(IOH)
- 1.5A
- Load Type
- MOSFET
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 4,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1 g
Overview
The 1EDN71x6U is a single-channel gate-driver IC optimized for driving Infineon CoolGaN Schottky Gate HEMTs, as well as other GaN SG HEMTs and Si MOSFETs. This gate driver includes several key features that enable a high-performance system design with GaN SG HEMTs, including Truly Diferential Input, four driving strength options, active Miller clamp, and bootstrap voltage clamp.
Applications
- Single channel: Synchronous rectifier Class-E resonant wireless power
- Half-bridge (2 x 1EDN71x6U): DC-DC converter, BLDC/PMSM motor drive, Class-D audio amplifier, Class-D resonant wireless power
Key features
- Optimized for driving GaN SG HEMTs and Si MOSFETs
- Fully diferential logic input circuitry to avoid false triggering in low-side or high-side operation
- High common-mode input voltage range (CMR) up to ± 200 V for high side operation
- High immunity to common-mode voltage transitions (100 V/ns) for robust operation during fast switching
- Compatible with 3.3 V or 5 V input logic
- Four driving strength variants to optimize switching speed without external gate resistors - up to 2 A source/sink current capability
- Active bootstrap clamp to avoid bootstrap capacitor overcharging during dead-time
- Active Miller clamp with 5 A sink capability to avoid induced turn-on
- Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
Alternatives
Similar parts — check the datasheet before substituting.
| Part | Manufacturer | Package | Stock | Price from (excl. GST) | Action | |
|---|---|---|---|---|---|---|
 | 1EDN7116UXTSA1#C6368849Infineon · PG-TSNP-7-11 | Infineon | PG-TSNP-7-11 | 3,481 | ₹171.57 · 3,481 in stock | View |
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