MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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VBsemi ElecDatasheet (PDF)
1N60L-TM3-T-VB
N-Channel 650V 2A 45W Through Hole TO-251
TO-251RoHSActive
MOSFET N-CH 650V 2A TO-251
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- 1N60L-TM3-T-VB
- Store part #
- C5456470
- Package / case
- TO-251
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
65 in stock
#C5456470
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹71.84 | ₹71.84 |
| 10+ | ₹56.93 | ₹569.30 |
| 30+ | ₹50.42 | ₹1,512.60 |
| 80+ | ₹42.44 | ₹3,395.20 |
| 480+ | ₹38.87 | ₹18,657.60 |
| 960+ | ₹36.55 | ₹35,088.00 |
1 × ₹71.84
₹71.84
excl. GST
₹84.77 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 80 per tube
1N60L-TM3-T-VB
₹71.84 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 650V
- Output Capacitance(Coss)
- 45pF
- Current - Continuous Drain(Id)
- 2A
- Ciss-Input Capacitance
- 417pF
- Pd - Power Dissipation
- 45W
- Reverse Transfer Capacitance (Crss)
- 5pF
- RDS(on)
- 4Ω@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 11nC@10V
- Gate Threshold Voltage (Vgs(th))
- 2V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 80 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1.02 g
Overview
Key features
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Compliant to RoHS directive 2002/95/EC
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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