Varnitronics
25LC080CT-E/SN MICROCHIP
MICROCHIP

25LC080CT-E/SN

8Kbit 5MHz SPI SOIC-8 Memory RoHS

SOIC-8ROHS3 CompliantActive

8Kbit SPI Serial EEPROM

Manufacturer
MICROCHIP
Manufacturer part #
25LC080CT-E/SN
Store part #
C2062407
Package / case
SOIC-8
Category
Memory
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

10 in stock

#C2062407

Stock & price checked 36 h ago

QuantityUnit pricePack price
1+₹186.75₹186.75
10+₹181.97₹1,819.70
30+₹178.91₹5,367.30
100+₹175.65₹17,565.00

1 × ₹186.75

₹186.75

excl. GST

₹220.36 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 3,300 per reel

25LC080CT-E/SN

₹186.75 for 1 + GST

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Specifications

Operating Temperature
-40℃~+150℃
Features
Hardware write protection function;Built-in write enable latch (WEL);Power-down/Power-up protection circuit
Memory Size
8Kbit
Voltage - Supply
2.5V~5.5V;5mA
Clock Frequency
5MHz
Data Retention - TDR (Year)
200 Years
Write Cycle Time(tWC)
6ms
Standby Supply Current
10uA
Write Cycle Endurance
1,000,000 cycles
Interface
SPI

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
3,300 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.111 g

Overview

Mid-density 8- through 256-Kbit Serial Electrically Erasable PROMs (EEPROM). The devices are organized in blocks of x8-bit memory and support the Serial Peripheral Interface (SPI) compatible serial bus architecture. Byte-level and page-level functions are supported. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts.

Key features

  • Maximum Clock: 5 MHz
  • Low-Power CMOS Technology:
  • Write current: 5 mA at 5.5V (maximum)
  • Read current: 5 mA at 5.5V, 5 MHz
  • Standby current: 10 μA at 5.5V
  • 1,024x8 through 32,768x8 -bit Organization
  • Byte and Page-Level Write Operations
  • Self-Timed Erase and Write Cycles (6 ms maximum)
  • Block Write Protection:
  • Protect none, 1/4, 1/2 or all of array
  • Built-in Write Protection:
  • Power-on/off data protection circuitry
  • Write enable latch
  • Write-protect pin
  • Sequential Read
  • High Reliability:
  • Endurance: >1,000,000 erase/write cycles
  • Data retention: >200 years
  • ESD protection: >4000 V
  • Temperature Range Supported:
  • Extended (H): -40℃ to +150℃
  • RoHS Compliant
  • Automotive AEC-Q100 Qualified

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