ADR425BRZ-REEL7

The ADR42x are a series of ultraprecision, second generation eXtra implanted junction FET (XFET) voltage references featuring low noise, high accuracy, and excellent long - term stability in SOIC and MSOP footprints. Patented temperature drift curvature correction technique and XFET technology minimize nonlinearity of the voltage change with temperature. The XFET architecture offers superior accuracy and thermal hysteresis to the band gap references. It also operates at lower power and lower supply headroom than the buried Zener references. The superb noise and the stable and accurate characteristics of the ADR42x make them ideal for precision conversion applications such as optical networks and medical equipment. The ADR42x trim terminal can also be used to adjust the output voltage over a ±0.5% range without compromising any other performance. The ADR42x series voltage references offer two electrical grades and are specified over the extended industrial temperature range of -40°C to +125°C. Devices have 8 - lead SOIC or 30% smaller, 8 - lead MSOP packages.

Applications

• Precision data acquisition systems
• High resolution converters
• Battery - powered instrumentation
• Portable medical instruments
• Industrial process control systems
• Precision instruments
• Optical network control circuits

Key features

• Low noise (0.1 Hz to ~ ADR420: 1.75 μV p - p; ADR421: 1.75 μV p - p; ADR423: 2.0 μV p - p; ADR425: 3.4 μV p - p)
• Low temperature coefficient: 3 ppm/°C
• Long - term stability: 50 ppm/1000 hours
• Load regulation: 70 ppm/mA
• Line regulation: 35 ppm/V
• Low hysteresis: 40 ppm typical
• Wide operating range: ADR420: 4 V to 18 V; ADR421: 4.5 V to 18 V; ADR423: 5 V to 18 V; ADR425: 7 V to 18 V
• Quiescent current: 0.5 mA maximum
• High output current: 10 mA
• Wide temperature range: -40°C to +125°C