MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
AP60N03GJ-VB
N-Channel 30V 100A 250W Through Hole TO-251
TO-251RoHSActive
MOSFET N-CH 30V 100A TO-251
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- AP60N03GJ-VB
- Store part #
- C19632216
- Package / case
- TO-251
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
15 in stock
#C19632216
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹61.76 | ₹61.76 |
| 10+ | ₹48.53 | ₹485.30 |
| 30+ | ₹42.85 | ₹1,285.50 |
| 80+ | ₹35.72 | ₹2,857.60 |
| 480+ | ₹32.56 | ₹15,628.80 |
| 960+ | ₹30.68 | ₹29,452.80 |
1 × ₹61.76
₹61.76
excl. GST
₹72.88 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 80 per tube
AP60N03GJ-VB
₹61.76 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 30V
- Output Capacitance(Coss)
- 710pF
- Current - Continuous Drain(Id)
- 100A
- Ciss-Input Capacitance
- 3nF
- Pd - Power Dissipation
- 250W
- Reverse Transfer Capacitance (Crss)
- 170pF
- RDS(on)
- 3.5mΩ@10V;4.5mΩ@4.5V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 171nC@10V
- Gate Threshold Voltage (Vgs(th))
- 2.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 80 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.3 g
Overview
Applications
- OR gate applications
- Servers
- DC/DC conversion
Key features
- Trench power MOSFET
- 100% Rg and UIS tested
- Compliant with EU RoHS Directive 2011/65/EU
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
 | NTD4806N-1G-VB#C18794940VBsemi Elec · TO-251 | VBsemi Elec | TO-251 | 20 | ₹65.04 · 20 in stock | View |
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