MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
NTD4806N-1G-VB
N-Channel 30V 100A 250W Through Hole TO-251
TO-251RoHSActive
MOSFET N-CH 30V 100A TO-251
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- NTD4806N-1G-VB
- Store part #
- C18794940
- Package / case
- TO-251
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
20 in stock
#C18794940
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹65.04 | ₹65.04 |
| 10+ | ₹51.65 | ₹516.50 |
| 30+ | ₹45.91 | ₹1,377.30 |
| 80+ | ₹38.68 | ₹3,094.40 |
| 480+ | ₹35.50 | ₹17,040.00 |
| 960+ | ₹33.58 | ₹32,236.80 |
1 × ₹65.04
₹65.04
excl. GST
₹76.75 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 80 per tube
NTD4806N-1G-VB
₹65.04 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 30V
- Output Capacitance(Coss)
- 710pF
- Current - Continuous Drain(Id)
- 100A
- Ciss-Input Capacitance
- 3nF
- Pd - Power Dissipation
- 250W
- Reverse Transfer Capacitance (Crss)
- 170pF
- RDS(on)
- 3.5mΩ@10V;4.5mΩ@4.5V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 171nC@10V
- Gate Threshold Voltage (Vgs(th))
- 2.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 80 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1.52 g
Overview
Applications
- OR gate
- Server
- DC/DC conversion
Key features
- Trench power MOSFET
- 100% Rg and UIS tested
- Compliant with EU RoHS Directive 2011/65/EU
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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