Varnitronics
AT25EU0041A-SSHN-T RENESAS
RENESAS

AT25EU0041A-SSHN-T

4Mbit 1.65V~3.6V 108MHz SPI SOIC-8 Memory RoHS

SOIC-8ROHS CompliantActive

4-Mbit, Ultra-Low Energy Serial Flash Memory

Manufacturer
RENESAS
Manufacturer part #
AT25EU0041A-SSHN-T
Store part #
C6508049
Package / case
SOIC-8
Category
Memory
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

10 in stock

#C6508049

Stock & price checked 27 h ago

QuantityUnit pricePack price
1+₹127.62₹127.62
10+₹124.80₹1,248.00
30+₹122.84₹3,685.20
100+₹121.11₹12,111.00

1 × ₹127.62

₹127.62

excl. GST

₹150.59 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 4,000 per reel

AT25EU0041A-SSHN-T

₹127.62 for 1 + GST

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Specifications

Operating Temperature
-40℃~+85℃
Memory Size
4Mbit
Voltage - Supply
1.65V~3.6V
Program / Erase Cycles
10000 times
Clock Frequency
108MHz
Data Retention - TDR (Year)
20 Years
Page Programming Time (Tpp)
2ms
Standby Supply Current
100nA
Interface
SPI

Packaging & compliance

RoHS
ROHS Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
4,000 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.64 g

Overview

Key features

  • Voltage Range: 1.65 V - 3.6 V
  • 4-Mbit Flash Memory
  • Serial Peripheral Interface (SPl) compatible
  • Supports SPl modes 0 and 3
  • Supports single input/output operations (1,1,1)
  • Supports dual input and dual output operations (1,1,2)
  • Supports quad input and quad output operations (1,1,4), (1,4,4), (0,4,4)
  • 108 MHz Maximum Operating Frequency
  • Program
  • Serial-input Page Program up to 256 bytes
  • Dual-Input Page Program up to 256 bytes
  • Quad-Input Page Program up to 256 bytes
  • Program Suspend and Resume
  • Erase
  • Page erase (256-byte)
  • Block erase (4/32/64 kbyte)
  • Full Chip erase
  • Erase Suspend and Resume
  • Program/Erase Speed
  • Page Program time: 2 ms typical
  • Page Erase time: 8 ms typical
  • Block Erase time: 8 ms typical
  • Chip Erase time: 8 ms typical
  • Flexible Architecture: 4/32/64 kbyte blocks
  • Software-controlled Reset
  • Software/Hardware Write Protection
  • 3x512-Byte Security Registers with OTP Lock
  • Enable/Disable protection with WP Pin
  • Write protect all/portion of memory via software protect
  • Top or Bottom Block selection
  • Low Power Consumption
  • 1.1 mA active read current (typical)
  • 100 nA Deep Power-Down (DPD) current (typical)
  • Temperature Range: -40 ℃ to +85 ℃
  • Cycling Endurance/Data Retention
  • 10k program and erase cycles
  • 20-year data retention
  • Industry standard green (Pb/Halide-free/RoHS Compliant)
  • 8-lead SOIC (150-mil)
  • 8-pad 2x3x0.6 mm UDFN

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