AT28BV64B-20SU-T

The AT28BV64B is a high-performance electrically erasable programmable read only-memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with advanced nonvolatile CMOS technology, the device offers access times to 200ns with power dissipation of just 54 mW. When the device is deselected, the CMOS standby current is less than 20μA. The AT28BV64B is accessed like a static RAM for the read or write cycle without the need for external components. The device contains a 64 byte page register to allow writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to 64 bytes of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a write cycle, the device will automatically write the latched data using an internal control timer. The end of a write cycle can be detected by DATA polling of I/O7. Once the end of a write cycle has been detected a new access for a read or write can begin. It has additional features to ensure high quality and manufacturability. A software data protection mechanism guards against inadvertent writes. The device also includes an extra 64 bytes of EEPROM for device identification or tracking.

Key features

• Single 2.7V to 3.6V Supply
• Hardware and Software Data Protection
• Low Power Dissipation – 15mA Active Current – 20μA CMOS Standby Current
• Fast Read Access Time – 200ns
• Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes – Internal Control Timer
• Fast Write Cycle Times – Page Write Cycle Time: 10 ms Maximum – 1 to 64 Byte Page Write Operation
• DATA Polling for End of Write Detection
• High-reliability CMOS Technology – Endurance: 100,000 Cycles – Data Retention: 10 Years
• JEDEC Approved Byte-wide Pinout
• Industrial Temperature Ranges
• Green (Pb/Halide-free) Packaging Only