Varnitronics
AT45DB041E-SHN2B-T RENESAS
RENESAS

AT45DB041E-SHN2B-T

FLASH - NOR Memory IC 2Mbit SPI 85MHz SOIC-8

SOIC-8ROHS CompliantActive

Serial Peripheral Interface Compatible Memory with Flexible Programming and Erase Options

Manufacturer
RENESAS
Manufacturer part #
AT45DB041E-SHN2B-T
Store part #
C5334561
Package / case
SOIC-8
Category
Memory
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

10 in stock

#C5334561

Stock & price checked 27 h ago

QuantityUnit pricePack price
1+₹417.09₹417.09
10+₹355.50₹3,555.00
30+₹316.96₹9,508.80
100+₹277.55₹27,755.00
500+₹259.69₹1,29,845.00
1,000+₹252.15₹2,52,150.00

1 × ₹417.09

₹417.09

excl. GST

₹492.17 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 2,000 per reel

AT45DB041E-SHN2B-T

₹417.09 for 1 + GST

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Specifications

Operating Temperature
-40℃~+85℃
Features
Power-on reset;Hardware write protection;Software write protection;Absolute write protection
Memory Size
2Mbit
Voltage - Supply
1.65V~3.6V
Program / Erase Cycles
100,000 cycles
Clock Frequency
85MHz
Data Retention - TDR (Year)
20 Years
Block Erase Time(tBE)
30ms@(2kB)
Page Programming Time (Tpp)
1.5ms
Standby Supply Current
25uA
Interface
SPI

Packaging & compliance

RoHS
ROHS Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
2,000 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.19 g

Overview

Key features

  • Single 1.65 V
  • 3.6 V supply
  • Serial Peripheral Interface (SPI) compatible
  • Supports SPI modes 0 and 3
  • Supports RapidS™ operation
  • Continuous read capability through entire array
  • Up to 85 MHz
  • Low-power read option up to 15 MHz
  • Clock-to-output time (tV) of 6 ns maximum
  • User-configurable page size
  • 256 bytes per page
  • 264 bytes per page (default)
  • Page size can be factory pre-configured for 256 bytes
  • Two fully independent SRAM data buffers (256/264 bytes)
  • Allows receiving data while reprogramming the main memory array
  • Flexible programming options
  • Byte/Page Program (1 to 256/264 bytes) directly into main memory
  • Buffer Write
  • Buffer to Main Memory Page Program
  • Flexible erase options
  • Page Erase (256/264 bytes)
  • Block Erase (2 kB)
  • Sector Erase (64 kB)
  • Chip Erase (4 Mbits)
  • Program and Erase Suspend/Resume
  • Advanced hardware and software data protection features
  • Individual sector protection
  • Individual sector lockdown to make any sector permanently read-only
  • 128-byte, One-Time Programmable (OTP) Security Register
  • 64 bytes factory programmed with a unique identifier
  • 64 bytes user programmable
  • Hardware and software controlled reset options
  • JEDEC Standard Manufacturer and Device ID Read
  • Low-power dissipation
  • 400 nA Ultra-Deep Power-Down current (typical)
  • 3 µA Deep Power-Down current (typical)
  • 25 µA Standby current (typical)
  • 7mA Active Read current (typical @ 15 MHz)
  • Endurance:
  • 100,000 program/erase cycles (-40°C to +85°C)
  • 10,000 program/erase cycles (-40°C to +125°C)
  • Data retention: 20 years
  • Complies with full industrial temperature range
  • Green (Pb/Halide-free/RoHS compliant) packaging options
  • 8-lead SOIC (0.150" wide and 0.208" wide)
  • 8-pad Ultra-thin DFN (5 x 6 x 0.6mm)
  • 8-ball Ultra-thin UBCA (6 x 6 x 0.6mm)
  • Die in Wafer Form (contact factory for availability)

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