Varnitronics
AT45DB321E-MWHF-T RENESAS
RENESAS

AT45DB321E-MWHF-T

32Mbit 2.3V~3.6V 85MHz SPI Memory RoHS

-ROHS3 CompliantActive
Manufacturer
RENESAS
Manufacturer part #
AT45DB321E-MWHF-T
Store part #
C20717740
Package / case
-
Category
Memory
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

10 in stock

#C20717740

Stock & price checked 38 h ago

QuantityUnit pricePack price
1+₹1,116.16₹1,116.16
10+₹1,091.24₹10,912.40
30+₹1,074.75₹32,242.50
100+₹1,058.06₹1,05,806.00

1 × ₹1,116.16

₹1,116.16

excl. GST

₹1,317.07 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 2,000 per reel

AT45DB321E-MWHF-T

₹1,116.16 for 1 + GST

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Specifications

Operating Temperature
-40℃~+85℃
Features
Power-on reset;Hardware write protection;Software write protection;Absolute write protection
Memory Size
32Mbit
Voltage - Supply
2.3V~3.6V
Program / Erase Cycles
100,000 cycles
Clock Frequency
85MHz
Data Retention - TDR (Year)
20 Years
Block Erase Time(tBE)
45ms@(4KB)
Page Programming Time (Tpp)
3ms
Standby Supply Current
25uA
Interface
SPI

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
3A991B1A
Packaging
Tape & Reel (TR)
Standard pack
2,000 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.6 g

Overview

Key features

  • Single supply voltage: 2.3V to 3.6V
  • SPI compatible
  • Supports SPI modes 0 and 3
  • High-speed operation
  • Continuous read across the entire array
  • Maximum frequency up to 85MHz
  • Low-power read option up to 15MHz
  • Maximum clock-to-output time: 6ns
  • User-configurable page size
  • 512 bytes per page
  • 528 bytes per page
  • Page size factory-preconfigurable to 512 bytes
  • Two fully independent SRAM data buffers
  • Flexible programming options
  • Byte or page programming directly to main memory
  • Buffer write
  • Buffer-to-main memory page programming
  • Flexible erase options
  • Page erase
  • Block erase
  • Sector erase
  • Chip erase
  • Program and erase suspend/resume
  • Advanced hardware and software data protection
  • Individual sector protection
  • Individual sector lockdown for permanent read-only
  • 128-byte OTP security register
  • 64 bytes factory-programmed with identifier
  • 64 bytes user-programmable
  • Hardware and software controlled reset options
  • Read manufacturer and device ID
  • Low power consumption
  • Typical ultra-deep power-down current: 400nA
  • Typical deep power-down current: 3μA
  • Typical standby current: 25μA
  • Typical read active current: 7mA
  • Minimum 100,000 program/erase cycles per page
  • 20-year data retention
  • RoHS-compliant package options
  • 8-pin SOIC package
  • 8-pad XDFN package
  • 8-pad DFN package
  • Bare die in wafer form

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