MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
JSCJDatasheet (PDF)
CJU02N60M1
N-Channel 600V 2A 31W Surface Mount TO-252-2L
TO-252-2LROHS CompliantActive
MOSFET N-CH 600V 2A TO-252-2L
- Manufacturer
- JSCJ
- Manufacturer part #
- CJU02N60M1
- Store part #
- C19943719
- Package / case
- TO-252-2L
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
1,000 in stock
#C19943719
Stock & price checked 7 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹24.99 | ₹124.95 |
| 50+ | ₹20.39 | ₹1,019.50 |
| 150+ | ₹18.42 | ₹2,763.00 |
| 500+ | ₹15.96 | ₹7,980.00 |
| 2,500+ | ₹14.86 | ₹37,150.00 |
| 5,000+ | ₹14.20 | ₹71,000.00 |
5 × ₹24.99
₹124.95
excl. GST
₹147.44 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
CJU02N60M1
₹124.95 for 5 + GST
Specifications
- Drain to Source Voltage
- 600V
- Operating Temperature
- -55℃~+150℃
- Output Capacitance(Coss)
- 38pF
- Current - Continuous Drain(Id)
- 2A
- Ciss-Input Capacitance
- 322pF
- Pd - Power Dissipation
- 31W
- Reverse Transfer Capacitance (Crss)
- 7pF
- RDS(on)
- 3.7Ω@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 60nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 1 g
Overview
The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power suppliers, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
Applications
- power suppliers
- converters
- PWM motor controls
- bridge circuits
Key features
- Robust High Voltage Termination
- Avalanche Energy Specified
- Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature
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