CY15B108QN-40SXI

The EXCELON™ LP CY15X108QN is a low power, 8-Mbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other non-volatile memories. Unlike serial flash and EEPROM, the CY15X108QN performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared to other non-volatile memories. The CY15X108QN is capable of supporting 10^15 read/write cycles, or 1000 million times more write cycles than EEPROM. These capabilities make the CY15X108QN ideal for non-volatile memory applications, requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash or EEPROM can cause data loss. The CY15X108QN provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement. The CY15X108QN uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology. The device incorporates a read-only Device ID and Unique ID features, which allow the host to determine the manufacturer, product density, product revision, and unique ID for each part. The device also provides a writable, 8-byte serial number registers, which can be used to identify a specific board or a system.

Key features

• Virtually unlimited endurance 1000 trillion (10^15) read/writes
• 151-year data retention
• Infineon instant non-volatile write technology
• Advanced high-reliability ferroelectric process
• Fast SPI (FSPI) - Up to 50 MHz frequency - Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
• Sophisticated write protection scheme - Hardware protection using the Write Protect (WP (overline)) pin - Software protection using Write Disable (WRDI) instruction - Software block protection for 1/4, 1/2, or entire array
• Device ID and serial number - Manufacturer ID and Product ID - Unique Device ID - Serial Number
• Dedicated 256-byte special sector F-RAM - Dedicated special sector write and read - Stored content can survive up to three standard reflow soldering cycles
• Low-power consumption - 2.8 mA (typ) active current at 50 MHz - 7.5 μA (typ) standby current - 0.9 μA (typ) Deep Power Down mode current - 0.1 μA (typ) Hibernate mode current
• Low-voltage operation - CY15V108QN: VDD = 1.71 V to 1.89 V - CY15B108QN: VDD = 1.8 V to 3.6 V
• Operating temperature - Industrial temperature (I): -40 ℃ to +85 ℃
• Package - 24-ball fine pitch ball grid array (24-ball FBGA)
• Restriction of hazardous substances (RoHS) compliant