DG612EEN-T1-GE4

The DG611E, DG612E, and DG613E contain four independently selectable SPST switches. They offer improved performance over the industry standard DG611 and DG611A series. The DG611E and DG612E have all switches normally closed and normally open respectively, while the DG613E has 2 normally open and 2 normally closed switches. They are designed to operate from a 3 V to 16 V single supply or from ±3 V to ±8 V dual supplies and are fully specified at +3 V, +5 V and ±5 V. All control logic inputs have guaranteed 2 V logic high limits when operating from +5 V or ±5 V supplies and 1.4 V when operating from a +3 V supply. The DG611E, DG612E, and DG613E switches conduct equally well in both directions and offer rail to rail analog signal handling. 1.4 pC low charge injection, coupled with very low switch capacitance: 3 pF, fast switching speed: ton/toff 23 ns/14 ns and excellent 3 dB bandwidth: 1 GHz, make these products ideal for precision instrumentation, high-end data acquisition, automated test equipment and high speed communication applications. Operation temperature is specified from -40 °C to +125 °C. The DG611E, DG612E, and DG613E are available in 16 lead SOIC, TSSOP and the space saving 1.8 mm × 2.6 mm miniQFN packages.

Applications

• Precision instrumentation
• Medical instrumentation
• Automated test equipment
• High speed communications applications
• High-end data acquisition
• Sample and hold applications
• Sample and hold systems

Key features

• 3 V to 16 V single supply or ±3 V to ±8 V dual supply
• Low charge injection (1.4 pC typ.)
• Leakage current <0.25 nA at 85 °C
• Low switch capacitance (Csoff 3 pF typ.)
• Fully specified with single supply operation at 3 V, 5 V, and dual supplies at ±5 V
• Low voltage, 2.5 V CMOS/TTL compatible
• 1 GHz, 3 dB bandwidth
• Excellent isolation performance (-59 dB at 10 MHz)
• Excellent crosstalk performance (-74 dB at 10 MHz)
• Fully specified from -40 °C to +85 °C and -40 °C to +125 °C
• 16 lead SOIC, TSSOP and miniQFN package (1.8 mm × 2.6 mm)