MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
onsemiDatasheet (PDF)
FCH023N65S3L4
N-Channel 650V 75A 175W Through Hole TO-247-4
TO-247-4ROHS3 CompliantActive
MOSFET N-CH 650V 75A TO-247-4
- Manufacturer
- onsemi
- Manufacturer part #
- FCH023N65S3L4
- Store part #
- C898112
- Package / case
- TO-247-4
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
7 in stock
#C898112
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹2,834.57 | ₹2,834.57 |
| 30+ | ₹2,705.05 | ₹81,151.50 |
1 × ₹2,834.57
₹2,834.57
excl. GST
₹3,344.79 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 30 per tube
FCH023N65S3L4
₹2,834.57 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 195pF
- Ciss-Input Capacitance
- 7.16nF
- Pd - Power Dissipation
- 175W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 650V
- Current - Continuous Drain(Id)
- 75A
- Reverse Transfer Capacitance (Crss)
- 90pF
- RDS(on)
- 23mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 222nC@10V
- Vgs
- ±30V
- Gate Threshold Voltage (Vgs(th))
- 4.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 6.31 g
Overview
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
Applications
- Telecom / Server Power Supplies
- Industrial Power Supplies
- UPS / Solar
Key features
- 700 V @ TJ = 150°C
- Typ. RDS(on) = 19.5 mΩ
- Ultra Low Gate Charge (Typ. Qg = 222 nC)
- Low Effective Output Capacitance (Typ. C0ss(eff.) = 1980 pF)
- 100% Avalanche Tested
- These Devices are Pb −Free and are RoHS Compliant
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
 | STW65N023M9-4#C20033906ST · TO-247-4 | ST | TO-247-4 | 6 | ₹3,616.98 · 6 in stock | View |
 | NTH4L027N65S3F#C604400onsemi · TO-247-4 | onsemi | TO-247-4 | 3 | ₹7,694.99 · 3 in stock | View |
 | IPZ65R019C7XKSA1#C3278956Infineon · TO-247-4 | Infineon | TO-247-4 | 3 | ₹2,600.83 · 3 in stock | View |
 | SCT4018KRC15#C7356385ROHM · TO-247-4L | ROHM | TO-247-4L | 1 | ₹5,075.41 · 1 in stock | View |
 | IPZ60R017C7#C537510Infineon · TO-247-4 | Infineon | TO-247-4 | 1 | ₹2,931.27 · 1 in stock | View |
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