MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
onsemiDatasheet (PDF)
FDS5670
N-Channel 60V 10A 50W Surface Mount SO-8
SO-8ROHS3 CompliantActive
MOSFET N-CH 60V 10A SO-8
- Manufacturer
- onsemi
- Manufacturer part #
- FDS5670
- Store part #
- C274240
- Package / case
- SO-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
40 in stock
#C274240
Stock & price checked 7 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹481.77 | ₹481.77 |
| 10+ | ₹423.66 | ₹4,236.60 |
| 30+ | ₹388.98 | ₹11,669.40 |
| 100+ | ₹354.06 | ₹35,406.00 |
| 500+ | ₹337.80 | ₹1,68,900.00 |
| 1,000+ | ₹330.64 | ₹3,30,640.00 |
1 × ₹481.77
₹481.77
excl. GST
₹568.49 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
FDS5670
₹481.77 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 685pF
- Ciss-Input Capacitance
- 2.9nF
- Pd - Power Dissipation
- 50W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 60V
- Current - Continuous Drain(Id)
- 10A
- Reverse Transfer Capacitance (Crss)
- 180pF
- RDS(on)
- 14mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 70nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.07 g
Overview
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable Rps(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Key features
- RDS(ON) = 0.014 Ω @ VGS = 10 V
- RDS(ON) = 0.017 Ω @ VGS = 6 V
- Low gate charge.
- Fast switching speed.
- High performance trench technology for extremely low RDs(ON)
- High power and current handling capability.
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Similar parts — check the datasheet before substituting.
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