MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
onsemiDatasheet (PDF)
FDT457N
N-Channel 30V 5A 3W Surface Mount SOT-223
SOT-223ROHS3 CompliantActive
MOSFET N-CH 30V 5A SOT-223
- Manufacturer
- onsemi
- Manufacturer part #
- FDT457N
- Store part #
- C467786
- Package / case
- SOT-223
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
320 in stock
#C467786
Stock & price checked 10 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹148.06 | ₹148.06 |
| 10+ | ₹121.15 | ₹1,211.50 |
| 30+ | ₹106.59 | ₹3,197.70 |
| 100+ | ₹89.88 | ₹8,988.00 |
| 500+ | ₹82.50 | ₹41,250.00 |
| 1,000+ | ₹79.02 | ₹79,020.00 |
1 × ₹148.06
₹148.06
excl. GST
₹174.71 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 4,000 per reel
FDT457N
₹148.06 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 145pF
- Ciss-Input Capacitance
- 235pF
- Pd - Power Dissipation
- 3W
- Operating Temperature
- -65℃~+150℃
- Drain to Source Voltage
- 30V
- Current - Continuous Drain(Id)
- 5A
- Reverse Transfer Capacitance (Crss)
- 50pF
- RDS(on)
- 43mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 4.2nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 1.6V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 4,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.162 g
Overview
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor
Applications
- notebook computer power management
- battery powered circuits
- DC motor
Key features
- These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology.
- This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance.
- 5 A, 30 V. RDS(ON)=0.06 Ω @ VGS=10 V, RDS(ON)=0.090 Ω @ VGS=4.5 V.
- High density cell design for extremely low RDS(ON).
- High power and current handling capability in a widely used surface mount package.
Alternatives
Similar parts — check the datasheet before substituting.
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