MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
FQP2N60C-VB
N-Channel 650V 2A 45W Through Hole TO-220AB
TO-220ABRoHSActive
MOSFET N-CH 650V 2A TO-220AB
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- FQP2N60C-VB
- Store part #
- C19626822
- Package / case
- TO-220AB
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
23 in stock
#C19626822
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹87.36 | ₹87.36 |
| 10+ | ₹71.72 | ₹717.20 |
| 50+ | ₹52.81 | ₹2,640.50 |
| 100+ | ₹44.33 | ₹4,433.00 |
| 500+ | ₹40.64 | ₹20,320.00 |
| 1,000+ | ₹38.47 | ₹38,470.00 |
1 × ₹87.36
₹87.36
excl. GST
₹103.08 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
FQP2N60C-VB
₹87.36 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 650V
- Output Capacitance(Coss)
- 912pF
- Current - Continuous Drain(Id)
- 2A
- Ciss-Input Capacitance
- 417pF
- Pd - Power Dissipation
- 45W
- Reverse Transfer Capacitance (Crss)
- 5pF
- RDS(on)
- 4Ω@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 11nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.784 g
Overview
Applications
- DC-DC Conversion - Notebook System Power
Key features
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Compliant to RoHS directive 2002/95/EC
Alternatives
Similar parts — check the datasheet before substituting.
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