MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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onsemiDatasheet (PDF)
FQPF2N80
35W 800V 1.5A 6.3Ω@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS
TO-220-3ROHS3 CompliantActive
- Manufacturer
- onsemi
- Manufacturer part #
- FQPF2N80
- Store part #
- C463978
- Package / case
- TO-220-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
50 in stock
#C463978
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹271.56 | ₹271.56 |
| 10+ | ₹265.46 | ₹2,654.60 |
| 50+ | ₹261.33 | ₹13,066.50 |
| 100+ | ₹257.19 | ₹25,719.00 |
1 × ₹271.56
₹271.56
excl. GST
₹320.44 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
FQPF2N80
₹271.56 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 45pF
- Ciss-Input Capacitance
- 550pF
- Pd - Power Dissipation
- 35W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 800V
- Current - Continuous Drain(Id)
- 1.5A
- Reverse Transfer Capacitance (Crss)
- 7pF
- RDS(on)
- 6.3Ω@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 15nC@640V
- Vgs
- ±30V
- Gate Threshold Voltage (Vgs(th))
- 5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.68 g
Overview
This N-channel enhancement-mode power MOSFET is manufactured using proprietary planar stripe and DMOS technology. This advanced MOSFET technology is specifically designed to minimize on-resistance while delivering superior switching performance and high avalanche energy ruggedness. These devices are suitable for switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Applications
- Switching mode power supplies
- Active power factor correction (PFC)
- Electronic lamp ballasts
Key features
- 1.5 A, 800 V, RDS(on) = 6.3 Ω (max) @ VGS = 10 V, ID = 0.75 A
- Low gate charge (typical 12 nC)
- Low Crss (typical 5.5 pF)
- 100% avalanche tested
Alternatives
Similar parts — check the datasheet before substituting.
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