HXY MOSFET

HINN700TK190B

725V 10A 73W 160mΩ 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs

TO-252-2LRoHSActive

Manufacturer: HXY MOSFET
Manufacturer part #: HINN700TK190B
Store part #: C49206785
Package / case: TO-252-2L
Category: Single FETs, MOSFETs
Packaging: Tape & Reel (TR)

Datasheet (PDF)

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1,598 in stock

#C49206785

Stock & price checked 6 days ago

Quantity	Unit price	Pack price
1+	₹116.44	₹116.44
10+	₹93.67	₹936.70
30+	₹82.40	₹2,472.00
100+	₹71.12	₹7,112.00
500+	₹64.40	₹32,200.00
1,000+	₹60.94	₹60,940.00

Quantity (min 1)

1 × ₹116.44

₹116.44

excl. GST

₹137.40 incl. 18% GST

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Standard pack: 2,500 per reel

HINN700TK190B

₹116.44 for 1 + GST

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Specifications

Operating Temperature: -55℃~+150℃
Drain to Source Voltage: 725V
Output Capacitance(Coss): 27pF
Current - Continuous Drain(Id): 10A
Ciss-Input Capacitance: 83pF
Pd - Power Dissipation: 73W
Technology: E-mode
Reverse Transfer Capacitance (Crss): 0.4pF
RDS(on): 160mΩ
Number: 1 N-channel
Gate Charge(Qg): 2.3nC
Gate Threshold Voltage (Vgs(th)): 1.6V
Type: N-Channel

Packaging & compliance

RoHS: RoHS
Lifecycle: Active
Packaging: Tape & Reel (TR)
Standard pack: 2,500 / Reel
Sold per: Piece
Minimum order: 1
Unit weight: 0.379 g

Overview

HINN700TK190B is a 725V silicon-based GaN enhancement-mode power transistor in a TO-252-2L package. The properties of GaN enable high current, high breakdown voltage, and high switching frequency. The TO-252-2L package features low parasitic inductance, excellent thermal dissipation, and high solderability, making GaN devices better suited for consumer and industrial applications.