HXY MOSFET

HINN700TK240B

725V 10A 73W 160mΩ 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs

TO-252-2LRoHSActive

Manufacturer: HXY MOSFET
Manufacturer part #: HINN700TK240B
Store part #: C49206786
Package / case: TO-252-2L
Category: Single FETs, MOSFETs
Packaging: Tape & Reel (TR)

Datasheet (PDF)

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1,568 in stock

#C49206786

Stock & price checked 5 days ago

Quantity	Unit price	Pack price
1+	₹119.49	₹119.49
10+	₹96.68	₹966.80
30+	₹85.39	₹2,561.70
100+	₹74.09	₹7,409.00
500+	₹67.35	₹33,675.00
1,000+	₹63.87	₹63,870.00

Quantity (min 1)

1 × ₹119.49

₹119.49

excl. GST

₹141.00 incl. 18% GST

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Standard pack: 2,500 per reel

HINN700TK240B

₹119.49 for 1 + GST

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Specifications

Drain to Source Voltage: 725V
Operating Temperature: -55℃~+150℃
Output Capacitance(Coss): 27pF
Current - Continuous Drain(Id): 10A
Ciss-Input Capacitance: 83pF
Technology: E-mode
Pd - Power Dissipation: 73W
Reverse Transfer Capacitance (Crss): 0.4pF
RDS(on): 160mΩ
Number: 1 N-channel
Gate Charge(Qg): 2.3nC
Type: N-Channel
Gate Threshold Voltage (Vgs(th)): 1.6V

Packaging & compliance

RoHS: RoHS
Lifecycle: Active
Packaging: Tape & Reel (TR)
Standard pack: 2,500 / Reel
Sold per: Piece
Minimum order: 1
Unit weight: 0.78 g

Overview

HINN700TK240B is a 725V enhancement-mode GaN-on-Si power transistor in a TO-252-2L package. The inherent material properties of GaN enable high current, high breakdown voltage, and high switching frequency operation. The TO-252-2L package features low parasitic inductance, excellent thermal dissipation, and high solderability, making GaN devices better suited for consumer and industrial applications.