MDD(Microdiode Semiconductor)
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InfineonDatasheet (PDF)
IMBG120R350M1HXTMA1
1.2kV 4.7A 65W 350mΩ 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS
TO-263-7ROHS3 CompliantActive
1200V SiC Trench MOSFET with XT interconnection technology
- Manufacturer
- Infineon
- Manufacturer part #
- IMBG120R350M1HXTMA1
- Store part #
- C6879142
- Package / case
- TO-263-7
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
6 in stock
#C6879142
Stock & price checked 43 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹555.42 | ₹555.42 |
| 10+ | ₹541.29 | ₹5,412.90 |
| 30+ | ₹531.95 | ₹15,958.50 |
| 100+ | ₹522.39 | ₹52,239.00 |
1 × ₹555.42
₹555.42
excl. GST
₹655.40 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 1,000 per reel
IMBG120R350M1HXTMA1
₹555.42 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 1.2kV
- Output Capacitance(Coss)
- 9pF
- Current - Continuous Drain(Id)
- 4.7A
- Ciss-Input Capacitance
- 196pF
- Pd - Power Dissipation
- 65W
- Reverse Transfer Capacitance (Crss)
- 0.94pF
- RDS(on)
- 350mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 5.9nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 5.7V
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 1,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1 g
Overview
IMBG120R350M1H is a CoolSiC™ 1200V silicon carbide trench MOSFET featuring .XT interconnect technology, with ultra-low switching losses, 3μs short-circuit withstand time, fully controllable dV/dt, 4.5V nominal gate threshold voltage, high immunity to parasitic turn-on (0V turn-off gate voltage applicable), robust body diode for hard commutation, superior .XT interconnect technology thermal performance, package creepage and clearance distances greater than 6.1mm, and a sense pin for optimized switching performance.
Applications
- Drives
- Infrastructure
- Energy Generation
- Industrial Power
Key features
- Ultra-low switching losses
- Short-circuit withstand time: 3μs
- Fully controllable dV/dt
- Nominal gate threshold voltage V_GS(th) = 4.5V
- High immunity to parasitic turn-on, supports 0V turn-off gate voltage
- Robust body diode for hard commutation
- .XT interconnect technology for best-in-class thermal performance
- Package creepage and clearance distance >6.1mm
- Sense pin for optimized switching performance
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
 | G3R350MT12J-TR#C29780488Navitas · TO-263-7 | Navitas | TO-263-7 | 1 | ₹700.59 · 1 in stock | View |
 | IMBF170R1K0M1XTMA1#C3279264Infineon · TO-263-7-13 | Infineon | TO-263-7-13 | 1,689 | ₹700.87 · 1,689 in stock | View |
| IMBG120R234M2HXTMA1#C26670594Infineon · TO-263-7 | Infineon | TO-263-7 | On request | ₹709.86 · 0 in stock | View | |
 | IMBF170R650M1XTMA1#C3289295Infineon · TO-263-7-13 | Infineon | TO-263-7-13 | 13 | ₹707.09 · 13 in stock | View |
 | IMBF170R450M1XTMA1#C6968776Infineon · TO-263-7 | Infineon | TO-263-7 | 188 | ₹896.39 · 188 in stock | View |
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