MDD(Microdiode Semiconductor)
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InfineonDatasheet (PDF)
IMZA120R012M2HXKSA1
1.2kV 129A 480W 16mΩ 1 N-channel N-Channel TO-247-4 Single FETs, MOSFETs
TO-247-4RoHSActive
- Manufacturer
- Infineon
- Manufacturer part #
- IMZA120R012M2HXKSA1
- Store part #
- C50389380
- Package / case
- TO-247-4
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
17 in stock
#C50389380
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹3,404.04 | ₹3,404.04 |
| 10+ | ₹3,283.16 | ₹32,831.60 |
1 × ₹3,404.04
₹3,404.04
excl. GST
₹4,016.77 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 30 per tube
IMZA120R012M2HXKSA1
₹3,404.04 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 1.2kV
- Current - Continuous Drain(Id)
- 129A
- Output Capacitance(Coss)
- 176pF
- Ciss-Input Capacitance
- 4.05nF
- Pd - Power Dissipation
- 480W
- Reverse Transfer Capacitance (Crss)
- 15pF
- RDS(on)
- 16mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 124nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 5.1V
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 8.47 g
Overview
Pin Definition: - Pin 1 - Drain - Pin 2 - Source - Pin 3 - Kelvin Sense Contact - Pin 4 - Gate Note: Source and sense pins are not interchangeable; swapping them may cause malfunction
Applications
- General Purpose Drive (GPD)
- EV Charging
- Online UPS / Industrial UPS
- String Inverter
- Energy Storage System (ESS)
- Welding
Key features
- Drain-source breakdown voltage V_DSS = 1200V at junction temperature Tᵥⱼ = 25°C
- DC drain current I_DDC = 91A at case temperature T_C = 100°C
- On-state resistance R_DS(on) = 12mΩ at gate-source voltage V_GS = 18V and junction temperature Tᵥⱼ = 25°C
- Extremely low switching losses
- Overload operation up to junction temperature Tᵥⱼ = 200°C
- Short-circuit withstand time of 2μs
- Defined gate threshold voltage V_GS(th) = 4.2V
- High immunity to parasitic turn-on, allowing 0V turn-off gate voltage
- Robust body diode for hard commutation
- Best-in-class thermal performance with .XT interconnection technology
Alternatives
Similar parts — check the datasheet before substituting.
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