MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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STDatasheet (PDF)
SCT015W120G3-4AG
1.2kV 129A 673W Through Hole HiP247-4
HiP247-4ROHS3 CompliantActive
SICFET 1.2kV 129A HiP247-4
- Manufacturer
- ST
- Manufacturer part #
- SCT015W120G3-4AG
- Store part #
- C5456203
- Package / case
- HiP247-4
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
26 in stock
#C5456203
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹3,923.69 | ₹3,923.69 |
| 30+ | ₹3,729.21 | ₹1,11,876.30 |
1 × ₹3,923.69
₹3,923.69
excl. GST
₹4,629.95 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 30 per tube
SCT015W120G3-4AG
₹3,923.69 for 1 + GST
Specifications
- Drain to Source Voltage
- 1.2kV
- Operating Temperature
- -55℃~+200℃
- Output Capacitance(Coss)
- 183pF
- Current - Continuous Drain(Id)
- 129A
- Ciss-Input Capacitance
- 3.512nF
- Pd - Power Dissipation
- 673W
- Reverse Transfer Capacitance (Crss)
- 28pF
- RDS(on)
- 20mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 167nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 4.2V
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1 g
Overview
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Applications
- Main inverter (electric traction)
- DC/DC converter for EV/HEV
- On board charger (OBC)
Key features
- AEC-Q101 qualified
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Very high operating junction temperature capability (TJ = 200 °C)
- Source sensing pin for increased efficiency
Alternatives
Similar parts — check the datasheet before substituting.
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