MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
IPB50N10S3L-16-VB
N-Channel 100V 100A 250W Surface Mount TO-263(D2PAK)
TO-263(D2PAK)RoHSActive
MOSFET N-CH 100V 100A TO-263(D2PAK)
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- IPB50N10S3L-16-VB
- Store part #
- C18795018
- Package / case
- TO-263(D2PAK)
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
70 in stock
#C18795018
Stock & price checked 5 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹149.10 | ₹149.10 |
| 10+ | ₹125.75 | ₹1,257.50 |
| 50+ | ₹98.60 | ₹4,930.00 |
| 100+ | ₹84.04 | ₹8,404.00 |
| 500+ | ₹77.65 | ₹38,825.00 |
| 1,000+ | ₹74.66 | ₹74,660.00 |
1 × ₹149.10
₹149.10
excl. GST
₹175.94 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
IPB50N10S3L-16-VB
₹149.10 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 100V
- Output Capacitance(Coss)
- 665pF
- Current - Continuous Drain(Id)
- 100A
- Ciss-Input Capacitance
- 6.55nF
- Pd - Power Dissipation
- 250W
- Reverse Transfer Capacitance (Crss)
- 265pF
- RDS(on)
- 23mΩ@4.5V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 160nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 3.38 g
Overview
Key features
- Trench Power MOSFET
- Maximum junction temperature 175 °C
- RoHS compliant per Directive 2002/95/EC
Alternatives
Similar parts — check the datasheet before substituting.
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