LMG3410R070RWHR

The LMG341xR070 GaN power stage features an integrated driver and protection functions, enabling designers to achieve a higher level of power density and efficiency in power electronics systems. The inherent advantages of the LMG341x surpass those of silicon MOSFETs, including ultra-low input and output capacitance values, zero reverse recovery that can reduce switching losses by 80%, and low switching node ringing that can reduce EMI. These advantages support dense and efficient topologies such as the totem-pole PFC. The LMG341xR070 offers an alternative to traditional cascode GaN and discrete GaN FETs by integrating a unique set of features to simplify the design, maximize reliability, and optimize the performance of any power supply. The integrated gate driver supports 100V/ns switching (with almost zero Vds ringing), a current limit of less than 100ns can prevent accidental breakdown events on its own, overheat shutdown can prevent thermal runaway, and system interface signals can provide self-monitoring capabilities.

Applications

• High-density industrial and consumer power supplies
• Multi-level converters
• Photovoltaic inverters
• Industrial motor drives
• Uninterruptible power supplies
• High-voltage battery chargers

Key features

• TI GaN process qualified through real-application hard-switching mission profile reliability accelerated testing
• High-density power conversion design support
• Superior system performance vs. cascode or discrete GaN FETs
• Low-inductance 8mm×8mm QFN package for simplified design and layout
• Adjustable drive strength for switching performance and EMI control
• Digital fault status output signal
• +12V unregulated supply only
• Integrated gate driver
• Zero common-source inductance, 20ns propagation delay for MHz-range switching frequency
• Process-tuned gate bias voltage for reliability assurance
• User-adjustable slew rate from 25 to 100V/ns
• Robust protection
• No external protection components required
• Overcurrent protection with response time <100ns
• Slew rate immunity >150V/ns
• Transient overvoltage immunity
• Overtemperature protection
• UVLO protection for all power rails