Varnitronics
M24C64-DFMN6TP ST
ST

M24C64-DFMN6TP

64Kbit 1.7V~5.5V 1MHz I2C SOP-8 Memory RoHS

SOP-8ROHS3 CompliantActive

64-Kbit serial I2C bus EEPROM

Manufacturer
ST
Manufacturer part #
M24C64-DFMN6TP
Store part #
C2061337
Package / case
SOP-8
Category
Memory
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

2,520 in stock

#C2061337

Stock & price checked 4 days ago

QuantityUnit pricePack price
1+₹32.84₹32.84
10+₹31.96₹319.60
30+₹31.53₹945.90
100+₹31.10₹3,110.00

1 × ₹32.84

₹32.84

excl. GST

₹38.75 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 2,500 per reel

M24C64-DFMN6TP

₹32.84 for 1 + GST

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Specifications

Operating Temperature
-40℃~+85℃
Features
Hardware write protection function;Built-in power-on reset (POR);Built-in error correction code (ECC) function;Page write protection function
Memory Size
64Kbit
Voltage - Supply
1.7V~5.5V
Clock Frequency
1MHz
Data Retention - TDR (Year)
200 Years
Write Cycle Time(tWC)
5ms
Write Cycle Endurance
4,000,000 Cycles
Interface
I2C

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
Moisture sensitivity
MSL 1 (unlimited)
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
2,500 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.632 g

Overview

This is an EEPROM storage device compatible with all I²C bus modes, featuring 64 Kbit (8 Kbyte) storage capacity and supporting multiple package options, including PDIP8 (BN), TSSOP8 (DW, 169 mil width), SO8 (MN, 150 mil width), UFDFPN8 (MC, DFN8 - 2×3 mm), UFDFPN5 (MH, DFN5 - 1.7×1.4 mm), WLCSP (CS), Thin WLCSP (CT), WLCSP (CU), and uncut wafer (each die individually tested).

Key features

  • PDIP8 (BN)
  • Compatible with all I²C bus modes: 1 MHz, 400 kHz, 100 kHz
  • Memory array: 64 Kbit (8 Kbyte) of EEPROM
  • Page size: 32 byte
  • Additional Write lockable page (M24C64 - D order codes)
  • Single supply voltage: 1.7 V to 5.5 V over -40°C / +85°C, 1.6 V to 5.5 V over 0°C / +85°C
  • Write: Byte Write within 5 ms, Page Write within 5 ms
  • Random and sequential Read modes
  • Write protect of the whole memory array
  • Enhanced ESD/Latch - Up protection
  • More than 4 million Write cycles
  • More than 200 - years data retention

Alternatives

Similar parts — check the datasheet before substituting.

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