ST
M24C64-FCS6TP/K
64Kbit 1MHz I2C WLCSP-5(1x1.1) Memory RoHS
WLCSP-5(1x1.1)ROHS3 CompliantActive
64-Kbit serial I2C bus EEPROM
Datasheet (PDF)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
18 in stock
#C2061114
Stock & price checked 5 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹87.97 | ₹87.97 |
| 10+ | ₹70.33 | ₹703.30 |
| 30+ | ₹61.40 | ₹1,842.00 |
| 100+ | ₹52.70 | ₹5,270.00 |
| 500+ | ₹47.47 | ₹23,735.00 |
| 1,000+ | ₹44.85 | ₹44,850.00 |
1 × ₹87.97
₹87.97
excl. GST
₹103.80 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
M24C64-FCS6TP/K
₹87.97 for 1 + GST
Specifications
- Operating Temperature
- -40℃~+85℃
- Features
- Hardware write protection function;Built-in power-on reset (POR);Built-in error correction code (ECC) function
- Memory Size
- 64Kbit
- Voltage - Supply
- 1.7V~5.5V;2mA
- Clock Frequency
- 1MHz
- Access Time
- 900ns
- Data Retention - TDR (Year)
- 200 Years
- Write Cycle Time(tWC)
- 5ms
- Standby Supply Current
- 3uA
- Write Cycle Endurance
- 4,000,000 Cycles
- Interface
- I2C
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.074 g
Overview
This is an EEPROM storage device compatible with all I²C bus modes, featuring 64 Kbit (8 Kbyte) storage capacity and supporting multiple package options, including PDIP8 (BN), TSSOP8 (DW, 169 mil width), SO8 (MN, 150 mil width), UFDFPN8 (MC, DFN8 - 2×3 mm), UFDFPN5 (MH, DFN5 - 1.7×1.4 mm), WLCSP (CS), Thin WLCSP (CT), WLCSP (CU), and uncut wafer (each die individually tested).
Key features
- PDIP8 (BN)
- Compatible with all I²C bus modes: 1 MHz, 400 kHz, 100 kHz
- Memory array: 64 Kbit (8 Kbyte) of EEPROM
- Page size: 32 byte
- Additional Write lockable page (M24C64 - D order codes)
- Single supply voltage: 1.7 V to 5.5 V over -40°C / +85°C, 1.6 V to 5.5 V over 0°C / +85°C
- Write: Byte Write within 5 ms, Page Write within 5 ms
- Random and sequential Read modes
- Write protect of the whole memory array
- Enhanced ESD/Latch - Up protection
- More than 4 million Write cycles
- More than 200 - years data retention
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