M95P08-IXMNT/E

The M95P08-I and M95P08-E are manufactured with ST's advanced proprietary NVM technology. They offer byte flexibility, page alterability, high page cycling performance, and ultra‑low power consumption, equivalent to that of EEPROM technology. The M95P08-I and M95P08-E are an 8-Mbit SPI page EEPROM device organized as 2048 programmable pages of 512 bytes each, accessed through an SPI bus with high-performance dual- and quad SPI outputs. The devices offer two additional (identification) 512-byte pages: The first contains identification data and, upon request, the UID. The second can be used to store sensitive application parameters, which can (later) be permanently locked in read-only mode. Additional status, configuration, and volatile registers set the desired device configuration, while the safety register provides information on the device status. The M95P08-I operates with a supply voltage from 1.6 to 3.6 V over an ambient temperature range of -40 ℃ to +85 ℃. The M95P08-E offers an extended temperature range from -40 ℃ to +105 ℃. The device supports a clock frequency of up to 80 MHz. The M95P08-I and M95P08-E offer byte and page write instructions of up to 512 bytes. Write instructions consist in self-timed auto erase and program operations, resulting in flexible data byte management. The devices also accept page/block/sector/chip erase commands to set the memory to an erased state. The memory can then be fast-programmed by 512-byte pages, and further optimized using the Page program buffer load instruction to hide the SPI communication latency.

Key features

• Supports serial peripheral interface (SPI) and dual/quad outputs
• Clock frequency up to 80 MHz
• Fast read single/dual/quad output with one dummy byte
• Dual output data transfer up to 160 Mbits/s
• Quad output data transfer up to 320 Mbits/s
• 8 Mbits of page EEPROM
• 64-Kbyte blocks, 4-Kbyte sectors
• Page size: 512-byte
• Two additional 512-byte identification pages
• Wide voltage range: VCC from 1.6 to 3.6 V
• Operating temperature range: -40 °C to +85 °C (industrial), -40 °C to +105 °C (extended)
• Write endurance: 500 kcycles on full temperature range
• Data retention 100 years, 10 years after 500 kcycles
• 0.6 μA (typ) in Deep power-down mode
• 16 μA (typ) in Standby mode
• 800 μA (typ) for read single at 10 MHz
• 1.5 mA (typ) for page write
• Current peak control <3 mA
• Fast write / program / erase times: 2 ms (typ) for Byte and Page write (includes auto erase and program) for 512 bytes
• 1.2 ms (typ) for Page program (512 bytes)
• 1.1 ms (typ) for Page erase
• 1.3 ms (typ) for sector erase
• 4 ms (typ) for block erase
• 4 ms (typ) for chip erase
• Page program with buffer load
• ECC for high memory reliability (DEC, TED)
• Schmitt trigger inputs for noise filtering
• Output buffer programmable strength
• Operating status flags for ISO26262
• Software reset
• Write protection by block, with top/bottom option
• Unique ID upon request
• Electronic identification
• Supports SFDP (serial flash discoverable parameters) mode
• JEDEC standard manufacturer identification
• ECOPACK2 (RoHS compliant) and halogen-free packages: DFN8 2 x 3 mm, SO8N, WLCSP8
• Enhanced ESD HBM (human body model)