Varnitronics
MX35LF1GE4AB-Z4I MXIC
MXIC

MX35LF1GE4AB-Z4I

1Gbit 2.7V~3.6V 104MHz SPI WSON-8-EP(6x8) Memory RoHS

WSON-8-EP(6x8)ROHS3 CompliantActive

Serial NAND Flash Memory

Manufacturer
MXIC
Manufacturer part #
MX35LF1GE4AB-Z4I
Store part #
C402160
Package / case
WSON-8-EP(6x8)
Category
Memory
Packaging
Tray
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

8,920 in stock

#C402160

Stock & price checked 4 days ago

QuantityUnit pricePack price
40+₹1,044.11₹41,764.40
400+₹889.84₹3,55,936.00
960+₹795.74₹7,63,910.40
3,840+₹716.87₹27,52,780.80

40 × ₹1,044.11

₹41,764.40

excl. GST

₹49,281.99 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 480 per tray

MX35LF1GE4AB-Z4I

₹41,764.40 for 40 + GST

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Specifications

Operating Temperature
-40℃~+85℃
Features
Read buffer function;Write enable latch;Software reset function;ECC error correction function;Software write protection function;Hardware write protection function;OTP region write protection and lock function;Bad block management function
Memory Size
1Gbit
Voltage - Supply
2.7V~3.6V
Program / Erase Cycles
100,000 cycles
Clock Frequency
104MHz
Data Retention - TDR (Year)
10 years
Block Erase Time(tBE)
1ms
Page Programming Time (Tpp)
600us
Standby Supply Current
50uA
Interface
SPI

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
Moisture sensitivity
MSL 3 (168 hours)
ECCN
3A991B1A
Packaging
Tray
Standard pack
480 / Tray
Sold per
Piece
Minimum order
40 (multiples of 40)
Unit weight
6.75 g

Overview

The MX35LFxGE4AB is a 1Gb/2Gb SLC NAND Flash memory device with Serial interface. The memory array of this device adopted the same cell architecture as the parallel NAND, however implementing the industry standard serial interface. An internal 4-bit ECC logic is implemented in the chip, which is enabled by default. The internal ECC can be disabled or enabled again by command. When the internal 4-bit ECC logic is disabled, the host side needs to handle the 4-bit ECC by host micro controller.

Key features

  • 1Gb/2Gb SLC NAND Flash - Bus: x4 - Page size: (2048 + 64) byte - Block size: (128K + 4K) byte
  • Fast Read Access - Supports Random data read out by x1 x2 & x4 modes, (1-1-1,1-1-2, 1-1-4)
  • Latency of array to register: 25us
  • Frequency: 104MHz
  • Page Program Operation - Page program time: 300us (typ)
  • Block Erase Operation - Block erase time: 1ms (typ.)
  • Single Voltage Operation: - VCC: 2.7 to 3.6V
  • BP bits for block group protection
  • Low Power Dissipation - Max 30mA Active current (Read/Program/Erase)
  • Sleep Mode - 50uA (Max) standby current
  • High Reliability - Program / Erase Endurance: Typical 100K cycles (with internal 4-bit ECC per (512+16) Byte - Data Retention: 10 years
  • Wide Temperature Operating Range -40℃ to +85℃
  • Package: 1) 8-WSON (8x6mm) for 1Gb 2)16-SOP (300mil) for 2Gb
  • All packaged devices are RoHS Compliant and Halogen-free.

Alternatives

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