MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
NDP603AL-VB
N-Channel 30V 80A 120W Through Hole TO-220AB
TO-220ABRoHSActive
MOSFET N-CH 30V 80A TO-220AB
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- NDP603AL-VB
- Store part #
- C20755257
- Package / case
- TO-220AB
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
20 in stock
#C20755257
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹75.62 | ₹75.62 |
| 10+ | ₹60.08 | ₹600.80 |
| 50+ | ₹53.36 | ₹2,668.00 |
| 100+ | ₹44.96 | ₹4,496.00 |
| 500+ | ₹41.17 | ₹20,585.00 |
| 1,000+ | ₹39.08 | ₹39,080.00 |
1 × ₹75.62
₹75.62
excl. GST
₹89.23 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
NDP603AL-VB
₹75.62 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 30V
- Output Capacitance(Coss)
- 525pF
- Current - Continuous Drain(Id)
- 80A
- Ciss-Input Capacitance
- 1.6nF
- Pd - Power Dissipation
- 120W
- Reverse Transfer Capacitance (Crss)
- 370pF
- RDS(on)
- 6mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 35nC@10V
- Gate Threshold Voltage (Vgs(th))
- 2.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.1 g
Overview
Applications
- Load Switches - Battery Switches
Key features
- Trench power MOSFET
- 100% tested for gate resistance (Rg) and unclamped inductive switching (UIS)
- Compliant with EU RoHS Directive 2011/65/EU
Alternatives
Similar parts — check the datasheet before substituting.
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