HXY MOSFET

NVMFD5C668NLWFT1G-HXY

108W 60V 80A 6mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs

DFN-8L(5x6)RoHSActive

Manufacturer: HXY MOSFET
Manufacturer part #: NVMFD5C668NLWFT1G-HXY
Store part #: C51949326
Package / case: DFN-8L(5x6)
Category: Single FETs, MOSFETs
Packaging: Tape & Reel (TR)

Datasheet (PDF)

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100% Authentic · 30-Day Return or Replacement · policy

97 in stock

#C51949326

Stock & price checked 5 days ago

Quantity	Unit price	Pack price
1+	₹166.23	₹166.23
10+	₹140.04	₹1,400.40
30+	₹125.43	₹3,762.90
100+	₹109.11	₹10,911.00
500+	₹102.02	₹51,010.00
1,000+	₹98.59	₹98,590.00

Quantity (min 1)

1 × ₹166.23

₹166.23

excl. GST

₹196.15 incl. 18% GST

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Dispatch in 15-18 working days
GST invoice with every order
Standard pack: 5,000 per reel

NVMFD5C668NLWFT1G-HXY

₹166.23 for 1 + GST

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Specifications

Output Capacitance(Coss): 286pF
Ciss-Input Capacitance: 4.136nF
Pd - Power Dissipation: 108W
Drain to Source Voltage: 60V
Configuration: Standalone
Operating Temperature: -55℃~+150℃
Current - Continuous Drain(Id): 80A
Reverse Transfer Capacitance (Crss): 257pF
RDS(on): 6mΩ@10V
Number: 1 N-channel
Gate Charge(Qg): 90nC@10V
Vgs: ±20V
Gate Threshold Voltage (Vgs(th)): 3V
Type: N-Channel

Packaging & compliance

RoHS: RoHS
Lifecycle: Active
Packaging: Tape & Reel (TR)
Standard pack: 5,000 / Reel
Sold per: Piece
Minimum order: 1
Unit weight: 0.143 g

Overview

The NVMFD5C668NLWFT1G utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.

Applications

Battery protection
Load switch
Uninterruptible power supply

Key features

VDS = 60 V, ID = 80 A
RDS(ON) < 7 mΩ @ VGS = 10 V

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