MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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HXY MOSFETDatasheet (PDF)
SIR664DP-T1-GE3-HXY
108W 60V 80A 6mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs
DFN-8L(5x6)RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SIR664DP-T1-GE3-HXY
- Store part #
- C53262841
- Package / case
- DFN-8L(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
61 in stock
#C53262841
Stock & price checked 5 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹131.88 | ₹131.88 |
| 10+ | ₹108.25 | ₹1,082.50 |
| 30+ | ₹96.43 | ₹2,892.90 |
| 100+ | ₹84.62 | ₹8,462.00 |
| 500+ | ₹77.75 | ₹38,875.00 |
| 1,000+ | ₹74.10 | ₹74,100.00 |
1 × ₹131.88
₹131.88
excl. GST
₹155.62 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SIR664DP-T1-GE3-HXY
₹131.88 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 286pF
- Ciss-Input Capacitance
- 4.136nF
- Pd - Power Dissipation
- 108W
- Drain to Source Voltage
- 60V
- Configuration
- Standalone
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 80A
- Reverse Transfer Capacitance (Crss)
- 257pF
- RDS(on)
- 6mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 90nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.139 g
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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