MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
NexperiaDatasheet (PDF)
PMPB30XPEX
3.8W 20V 8.5A 34mΩ@4.5V 1 P-Channel P-Channel SOT-1220 Single FETs, MOSFETs RoHS
SOT-1220ROHS3 CompliantActive
- Manufacturer
- Nexperia
- Manufacturer part #
- PMPB30XPEX
- Store part #
- C553042
- Package / case
- SOT-1220
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
99 in stock
#C553042
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹100.35 | ₹100.35 |
| 10+ | ₹80.37 | ₹803.70 |
| 30+ | ₹70.60 | ₹2,118.00 |
| 100+ | ₹60.61 | ₹6,061.00 |
| 500+ | ₹54.73 | ₹27,365.00 |
| 1,000+ | ₹51.70 | ₹51,700.00 |
1 × ₹100.35
₹100.35
excl. GST
₹118.41 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
PMPB30XPEX
₹100.35 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 184pF
- Ciss-Input Capacitance
- 1.517nF
- Pd - Power Dissipation
- 3.8W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 20V
- Current - Continuous Drain(Id)
- 8.5A
- Reverse Transfer Capacitance (Crss)
- 133pF
- RDS(on)
- 34mΩ@4.5V
- Number
- 1 P-Channel
- Gate Charge(Qg)
- 12.5nC
- Gate Threshold Voltage (Vgs(th))
- 1V
- Type
- P-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.066 g
Overview
P-channel enhancement-mode FET using trench MOSFET technology, housed in a leadless medium-power DFN2020MD-6 (SOT1220) SMD plastic package.
Applications
- Relay driver - High-speed line driver - High-side load switch - Switching circuit
Key features
- Extended temperature range Tj = 175°C
- Compact leadless ultra-thin SMD plastic package: 2 × 2 × 0.65 mm
- 100% matte tin-plated solderable side pads for optical solder inspection
- ESD protection >2 kV HBM
- Trench MOSFET technology
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