MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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VBsemi ElecDatasheet (PDF)
PXN011-100QLJ-VB
355W 100V 50A 10mΩ@10V 1 N-channel N-Channel DFN-8(3x3) Single FETs, MOSFETs
DFN-8(3x3)RoHSActive
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- PXN011-100QLJ-VB
- Store part #
- C52148625
- Package / case
- DFN-8(3x3)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C52148625
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹174.38 | ₹174.38 |
| 10+ | ₹145.65 | ₹1,456.50 |
| 30+ | ₹129.75 | ₹3,892.50 |
| 100+ | ₹111.90 | ₹11,190.00 |
| 500+ | ₹103.84 | ₹51,920.00 |
| 1,000+ | ₹100.15 | ₹1,00,150.00 |
1 × ₹174.38
₹174.38
excl. GST
₹205.77 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
PXN011-100QLJ-VB
₹174.38 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 410pF
- Ciss-Input Capacitance
- 3.2nF
- Pd - Power Dissipation
- 355W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 100V
- Current - Continuous Drain(Id)
- 50A
- Reverse Transfer Capacitance (Crss)
- 210pF
- RDS(on)
- 10mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 90nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.29 g
Overview
Applications
- Isolated DC/DC Converter
Key features
- Trench power MOSFET
- 175°C junction temperature
- Low thermal resistance package
- 100% gate resistance (Rg) tested
- RoHS compliant
Alternatives
Similar parts — check the datasheet before substituting.
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