MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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HXY MOSFETDatasheet (PDF)
RQ3E160ADTB1-HXY
46W 30V 90A 3.5mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs
DFN-8L(3x3)RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- RQ3E160ADTB1-HXY
- Store part #
- C53263038
- Package / case
- DFN-8L(3x3)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
40 in stock
#C53263038
Stock & price checked 5 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹64.22 | ₹64.22 |
| 10+ | ₹51.54 | ₹515.40 |
| 30+ | ₹45.96 | ₹1,378.80 |
| 100+ | ₹39.09 | ₹3,909.00 |
| 500+ | ₹36.09 | ₹18,045.00 |
| 1,000+ | ₹34.37 | ₹34,370.00 |
1 × ₹64.22
₹64.22
excl. GST
₹75.78 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
RQ3E160ADTB1-HXY
₹64.22 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 277pF
- Ciss-Input Capacitance
- 2.088nF
- Pd - Power Dissipation
- 46W
- Operating Temperature
- -55℃~+175℃
- Configuration
- Standalone
- Drain to Source Voltage
- 30V
- Current - Continuous Drain(Id)
- 90A
- Reverse Transfer Capacitance (Crss)
- 209pF
- RDS(on)
- 3.5mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 20nC@4.5V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 1.6V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.092 g
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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