MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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HXY MOSFETDatasheet (PDF)
SIRA01DP-T1-GE3-HXY
30V 90A 60W 3.5mΩ@10V 1 P-Channel P-Channel DFN-8L(5x6) Single FETs, MOSFETs
DFN-8L(5x6)RoHSActive
MOSFET P-CH 30V 90A DFN-8L(5x6)
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SIRA01DP-T1-GE3-HXY
- Store part #
- C22367088
- Package / case
- DFN-8L(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
419 in stock
#C22367088
Stock & price checked 5 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹105.81 | ₹105.81 |
| 10+ | ₹85.21 | ₹852.10 |
| 30+ | ₹75.03 | ₹2,250.90 |
| 100+ | ₹64.62 | ₹6,462.00 |
| 500+ | ₹58.54 | ₹29,270.00 |
| 1,000+ | ₹55.51 | ₹55,510.00 |
1 × ₹105.81
₹105.81
excl. GST
₹124.86 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SIRA01DP-T1-GE3-HXY
₹105.81 for 1 + GST
Specifications
- Configuration
- Standalone
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 30V
- Output Capacitance(Coss)
- 695pF
- Current - Continuous Drain(Id)
- 90A
- Ciss-Input Capacitance
- 5.07nF
- Pd - Power Dissipation
- 60W
- Reverse Transfer Capacitance (Crss)
- 580pF
- RDS(on)
- 3.5mΩ@10V
- Number
- 1 P-Channel
- Gate Charge(Qg)
- 146nC@10V
- Gate Threshold Voltage (Vgs(th))
- 1.6V
- Type
- P-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.133 g
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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 | NVMFS5A140PLZWFT3G-HXY#C52174745HXY MOSFET · DFN-8L(5x6) | HXY MOSFET | DFN-8L(5x6) | 23 | ₹255.67 · 23 in stock | View |
 | NVMFS5A140PLZT1G-HXY#C52174746HXY MOSFET · DFN-8L(5x6) | HXY MOSFET | DFN-8L(5x6) | 506 | ₹443.83 · 506 in stock | View |
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