MDD(Microdiode Semiconductor)
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HXY MOSFETDatasheet (PDF)
SIS330DN-T1-GE3-HXY
62.5W 30V 55A 4.7mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs
DFN-8L(3x3)RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SIS330DN-T1-GE3-HXY
- Store part #
- C53263229
- Package / case
- DFN-8L(3x3)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
39 in stock
#C53263229
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹79.95 | ₹79.95 |
| 10+ | ₹65.69 | ₹656.90 |
| 30+ | ₹59.64 | ₹1,789.20 |
| 100+ | ₹52.07 | ₹5,207.00 |
| 500+ | ₹43.43 | ₹21,715.00 |
| 1,000+ | ₹41.49 | ₹41,490.00 |
1 × ₹79.95
₹79.95
excl. GST
₹94.34 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SIS330DN-T1-GE3-HXY
₹79.95 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 400pF
- Ciss-Input Capacitance
- 3.075nF
- Pd - Power Dissipation
- 62.5W
- Configuration
- Standalone
- Drain to Source Voltage
- 30V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 55A
- Reverse Transfer Capacitance (Crss)
- 315pF
- RDS(on)
- 4.7mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 31.6nC@4.5V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 1.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.07 g
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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 | DMT35M4LFVW-13-HXY#C53263176HXY MOSFET · DFN-8L(3x3) | HXY MOSFET | DFN-8L(3x3) | 85 | ₹42.96 · 85 in stock | View |
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