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HXY MOSFETDatasheet (PDF)
SIS4406DN-T1-GE3-HXY
40V 70A 52W 4.2mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs
DFN-8L(3x3)RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SIS4406DN-T1-GE3-HXY
- Store part #
- C54582781
- Package / case
- DFN-8L(3x3)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
46 in stock
#C54582781
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹94.73 | ₹94.73 |
| 10+ | ₹76.93 | ₹769.30 |
| 30+ | ₹67.94 | ₹2,038.20 |
| 100+ | ₹59.15 | ₹5,915.00 |
| 500+ | ₹53.79 | ₹26,895.00 |
| 1,000+ | ₹51.00 | ₹51,000.00 |
1 × ₹94.73
₹94.73
excl. GST
₹111.78 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SIS4406DN-T1-GE3-HXY
₹94.73 for 1 + GST
Specifications
- Configuration
- Standalone
- Drain to Source Voltage
- 40V
- Output Capacitance(Coss)
- 233pF
- Current - Continuous Drain(Id)
- 70A
- Ciss-Input Capacitance
- 2.8nF
- Pd - Power Dissipation
- 52W
- Reverse Transfer Capacitance (Crss)
- 152pF
- RDS(on)
- 4.2mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 25nC@4.5V
- Gate Threshold Voltage (Vgs(th))
- 1.6V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.098 g
Overview
The SIS4406DN-T1-GE3 employs advanced trench technology to deliver excellent on-resistance (RDS(ON)), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.
Applications
- Battery protection
- Load switch
- Uninterruptible power supply
Key features
- Drain-source voltage (VDS) = 40V, drain current (ID) = 70A
- On-resistance (RDS(ON)) < 5.5mΩ at gate-source voltage (VGS) = 10V
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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